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題名:應用氧化鋅鈀材成長氮摻雜感測材料之研製
書刊名:國立高雄海洋科大學報
作者:楊誌欽陳楷錫林宗義吳秉宸
作者(外文):Yang, Chih-chinChen, Kai-siLin, Tsung-iWu, Ping-chen
出版日期:2010
卷期:24
頁次:頁105-113
主題關鍵詞:氧化鋅濺鍍成長氮摻雜ZnOSputtering systemNitrogen doping
原始連結:連回原系統網址new window
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  • 點閱點閱:21
本研究將針對氮摻雜氧化鋅感測材料進行研究,使用氧化鋅鈀材並通入氮氣,利用濺鍍法(Sputtering)、顯影技術、蝕刻技術製造感溼元件,並使用顯微鏡與膜厚量測儀去測量成長的厚度,並以顯微鏡觀察感測膜品質,再以阻抗量測儀進行電容感濕量測,以研究氮摻雜對氧化鋅材料的影響。研究中氧化鋅加入氮元素之成長機制研究,利用改變濺鍍(Sputtering)時氮氣體流量,固定基板加熱溫度、濺鍍時間、氧化鋅成長壓力等變數,消除鋅插入缺陷(Zinc interstitial)與氧空隙缺陷(Oxygen defect) ,成長含氮之氧化鋅溼度感測材料。
This research was proposed to utilize sputtering system within ZnO target to fabricate material of electronics nose of ZnO sensor by doping N2, and expected to use it in micro multiple bio-sensor system with intelligent functions in new generation. The first test was material measurement for ZnO deposited on Si substrate. The fixed pressure, growth time, gas flow rate, annealing and growth temperature, and DC applied voltage of sputtering system will be selected to study characteristics of the ZnO sensors with doping of nitrogen.
期刊論文
1.Zhang, Y.、Yu, K.、Ouyang, S.、Luo, L.、Hu, H.、Zhang, Q.、Zhu, Z.(2005)。Detection of humidity based on quartz crystal microbalance coated with ZnO nanostructure films。Physica B,94-99。  new window
2.Jin, C.、Narayan, R.、Tiwari, A.、Zhou, H.、Kvit, A.、Narayan, J.(2005)。Epitaxial growth of zinc oxide thin films on silicon。Materials Science and Engineering,B117,348-354。  new window
3.Tatsumi, T.、Fujita, M.、Kawamoto, N.、Sasajima, M.、Horikoshi, Y.(2004)。Instrinsic defects in ZnO films grown by molecular beam epitaxy。Japanese Journal of Applied Physics,43(5A),2602-2606。  new window
4.Tetelin, A.、Pouget, V.、Lachaud, J. L.、Pellet, C.(2004)。Dynamic behavior of a chemical sensor for humidity level measurement in human breathmeasurement in human breath。IEEE Transaction on Instrument and Measurement,53(4),1262-1267。  new window
5.Sbar, N. L.、Kozakiewicz, R. P.(1979)。New acceleration factors for temperature, humidity, bias testing。IEEE Transaction on Electronic Devices,26(1),56-71。  new window
6.J. Wang(2001)。Composites of nanocrystal BaTiO3 and polymer gave better sensing properties than that of BaTiO3。Materials Chemistry and Physics,69,288-291。  new window
7.K. Suri(2002)。Gas and humidity sensors based on pellets of FeCl3 polypryrrole nanocomposite。Sensors and Actuators,B81,277-281。  new window
8.Y. Li(2006)。Nanocomposite of sodium polystyrenesulfonate with TiO2。Chinese Journal of Polymer Science。  new window
9.A. Tetelin、C. Pellet(2006)。Modeling and optimization of a fast response capacitive humidity sensor。IEEE Sensors Journal,6(3),2006。  new window
10.S. N. Chen、E. S. Ramakrishnan、R. S. Huang、W. W. Grannemann(1984)。A new thin film humidity microsensor。IEEE Electron Device Letters,5(11),452-453。  new window
11.S. A. Krutovertsev、A. E. Tarasova、L. S. Krutovertseva、A. V. Zorin(1997)。Integrated multifunctional humidity sensor。Sensors and Actuators,A62,582-585。  new window
會議論文
1.Du, G.、Zhang, Y.、Ma, Y.、Yang, X.、Zhao, B.、Liu, B.、Yang, T.、Yang, H.、Liu, D.(2003)。ZnO thin films growth by plasma assisted metal organic vapor phase epitaxy。IEEE Conference of Sensor and Acoustic,292-296。  new window
2.Hong, H. G.、Seong, T. Y.、Lee, S.(2003)。Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates。IEEE Conference of Sensor and Acoustic,121-122。  new window
3.J. G. Li、S. P. Lee(2005)。Impedence characteristics of carbon nitride films for humidity sensors。The 13th International Conference on Solid State Sensors, Actuators and Microsystems,1844-1847。  new window
4.M. J. Yang、Y. Li、M. F. Ling、H. P.Wang(2002)。Humidity sensors using In-situ synthesized sodium polystyrenesulfonate/ZnO nanocomposites。2005 IEEE, Engineering in Medicine and Biology 24th Annual Conference。  new window
5.W. Y. Chang、W. W. Ke、Y. S. Hsieh、N. H. Kuo、Y. C. Lin(2005)。Using Pt dopant and sol gel technology for sensitivity enhancement of TiO2/SnO2 humidity sensors。2005 IEEE, Engineering in Medicine and Biology 27th Annual Conference。  new window
6.G. M. O’Halloran、P. M. Sarro、J. Groeneweg、P. J. Trimp、P. J. Trimp(997)。A bulk micromachined humidity sensor based on porous silicon563-566。  new window
 
 
 
 
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